YSESD9D12T5G Datasheet, PDF (2/4 Pages) Yea Shin Technology Co., Ltd – YSESD9D12T5GESD PROTECTION DIODE

ELECTRICAL CHARACTERISTICS
YSESD9D12T5G
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted, VF=0.9V Max. @ IF=10Ma for all types)
Device
V_{RW M}
(V)
Max
I_R
(μA)
@
V_{RW M}
Max
V_BR
I_T
I_PP
V_C
P_PK
C
(V) （mA） (A)
(V)
(W) (pF)
@ I_T
@ Max I_PP (8*20 μs)
(Note 2)
(Note 3) (Note 3)
Min
Max
Max
Typ Typ
YSESD9D3.3T5G
3.3
2.5
5.0 1.0 9.8
10.4
102
80
YSESD9D5.0T5G
5.0
1.0
6.2 1.0 8.7
12.3
107
65
YSESD9D12T5G
12
1.0
13.5 1.0 5.9
23.7
140
30
Other voltage available upon request.
2. V_BR is measured with a pulse test current IT at an ambient temperature of 25℃
3. Surge current waveform per Figure 3.
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2
REV.02 20130402