YSCLAMP0524P Datasheet, PDF (2/3 Pages) Yea Shin Technology Co., Ltd – Ultra Low Capacitance TVS Diode Array

DEVICE CHARACTERISTICS
YSCLAMP0524P
MAXIMUM RATINGS (@ 25℃ Unless Otherwise Specified)
PARAMETER
SYMBOL
VALUE
Peak Pulse Power (tp=8/20µs waveform)
Lead Soldering Temperature
Operating Temperature Range
Storage Temperature Range
P_PP
T_L
T_J
T_STG
150
260 (10 sec.)
-55 ~ 150
-55 ~ 150
UNITS
Watts
℃
℃
℃
ELECTRICAL CHARACTERISTICS PER LINE (@ 25℃ Unless Otherwise Specified)
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
V_RWM
I/O Pins to GND (Note 1)
V_BR
I_T=1mA, I/O Pin to GND
6.0
I_R
V_RWM=5V, I/O Pin to GND
V_C I_PP=1A, I/O Pin to GND (8/20µs)
C_J
V_R=0V, f=1MHz between I/Os
5.0
V
V
1.0
µA
15
V
0.4
pF
Junction Capacitance
C_J
V_R=0V, f=1MHz between I/Os &
GND
0.8
pF
Note 1 : TVS devices are normally selected according to the working peak reverse voltage (VRWM), which
should be equal or greater than the DC or continuous peak operating voltage level.
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2
REV.02 20120305