BAT140 Datasheet, PDF (2/3 Pages) NXP Semiconductors – Schottky barrier double diodes

DEVICE CHARACTERISTICS
Electrical characteristic curves(T_A = 25°C)
BAT140
1.0
10
0.75
1.0
0.50
0.1
0.25
0
0
25
50 75 100 125 150
T_T, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
1000
f = 1MHz
100
0.01
0
0.2
0.4
0.6
0.8
1.0
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
150
125
100
75
10
50
1.0
0
5
10
15
20
25
V_R, DC REVERSE VOLTAGE (V)
Fig. 3 Typ. Total Capacitance vs Reverse Voltage
25
1
10
20 30 40 50
V_R, REVERSE VOLTAGE (V)
Fig. 4 Typical Safe Operating Area
Note: 1. Assumed application thermal conditions.
RqJA varies depending on application.
http://www.yeashin.com
2
REV.01 20120824