8050HP Datasheet, PDF (2/3 Pages) Yea Shin Technology Co., Ltd – General Purpose Transistors

ELECTRICAL CHARACTERISTICS
8050HP/Q/R/S
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
25
–
(IC=1.0mA)
Emitter-Base Breakdown Voltage
(IE=100µΑ)
V(BR)EBO
5
–
Collector-Base Breakdown Voltage
(IC=100µΑ)
V(BR)CBO
40
–
Collector Cutoff Current (VCB=35V)
ICBO
–
–
Emitter Cutoff Current (VEB=4V)
IEBO
–
–
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS
DC Current Gain
IC=100mA,VCE=1V
h_FE
120
-
Collector-Emitter Saturation Voltage
(IC=800mA IB=80mA)
VCE(S)
-
-
Max
Unit
–
V
–
V
–
V
150
nA
150
nA
Max
Unit
600
0.5
V
NOTE :
*
P
hF E
120~200
Q
R
150~300 200~400
S
300~600
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REV.02 20120705