4601DQ Datasheet, PDF (2/3 Pages) Yea Shin Technology Co., Ltd – Silicon NPN Epitaxial Planer Transistor

DEVICE CHARACTERISTICS
4601DQ
Tr1
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=1mA)
Emitter-Base Breakdown Voltage
(IE=50 A)
Collector-Base Breakdown Voltage
(IC=50 A)
Collector Cutoff Current
(VCB=60V)
Symbol
Min
Typ
V(BR)CEO
50
-
V(BR)EBO
6
-
V(BR)CBO
60
-
ICBO
-
-
EMITTER CUTOFF CURRENT
VEB=7V
IEBO
-
-
ON CHARACTERISTICS
DC Current Gain
(IC=1mA, VCE=6.0V)
Collector-Emitter Saturation Voltage
(IC=50mA,IB=5mA)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(VCE = 12.0V; IE =-2.0 mA,f=100MHZ)
Output Capacitance(VCE=12V,f=1.0MHz)
Hfe
120
-
VCE(SAT)
-
-
Ft
-
180
Cobo
-
2
Tr2
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1mA)
Emitter-Base Breakdown Voltage
(IE=-50 A)
Collector-Base Breakdown Voltage
(IC=-50 A)
Collector Cutoff Current
(VCB=-60V)
Symbol
Min
Typ
V(BR)CEO
-50
-
V(BR)EBO
-6
-
V(BR)CBO
-60
-
ICBO
-
-
Emitter Cutoff Current (VBE=-6V)
ON CHARACTERISTICS
DC Current Gain
(IC=-1mA, VCE=-6.0V)
Collector-Emitter Saturation Voltage
(IC=-50mA,IB=-5mA)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(VCE = -12.0V; IE =2.0 mA,f=300MHZ)
Output Capacitance(VCB=-12V,f=1.0MHz)
IEBO
Hfe
120
-
VCE(SAT)
-
-
Ft
-
140
Cobo
-
4
http://www.yeashin.com
2
Max
Unit
-
V
-
V
-
V
0.1
A
0.1
A
560
0.4
V
-
MHz
3.5
Pf
Max
Unit
-
V
-
V
-
V
-0.1
A
-0.1
A
560
-0.5
V
-
MHz
5
Pf
REV.02 20120705