YSESDU5V0SP-04C Datasheet, PDF (1/4 Pages) Yea Shin Technology Co., Ltd – Low Capacitance ESD Protection Diode

DATA SHEET
SEMICONDUCTOR
YSESDU5V0SP-04C
Low Capacitance ESD Protection Diode
H
FEATURES
◆ Bi-directional ESD protection.
◆ IEC61000-4-2 Level 4 ESD protection.
◆ Working Voltage: 5V
◆ Typical capacitance: 0.3pF
0402C/SOD-923F
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
MECHANICAL CHARACTERISTICS
◆ Case: 0402C/SOD-923F small outline plastic package.
molded plastic.
◆ Terminals: Matte tin plated, solderable per
MIL-STD-202,method 208.
◆ _{Mounting position:} Any.
◆ High temperature soldering guaranteed:
Weight: 0.001 grams(approx.).
Circuit diagram
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Peak pulse current ( tp = 8/20µs waveform)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating temperature rang
Storage temperature rang
0.012(0.30)
0.008(0.20)
0.022(0.55)
0.018(0.45)
0.001(0.02)
Max.
0.022(0.55)
0.018(0.45)
Dimensions in inches and (millimeter)
Symbol
PPP
VESD
TJ
TSTG
Value
60
±15
±8
-55 to +150
-55 to +150
Unit
W
kV
°C
°C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Reverse stand-Off voltage
VRWM
Reverse leakage current
VR = 5 V
IR
Reverse breakdown voltage
IR = 1 mA
V(BR)
IPP= 1 A
VC
Clamping voltage
IPP= 3A
VC
Junction capacitance
VR= 0V , F=1MHz
CJ
Min
-
-
6
-
-
-
Typ
-
-
-
13
18
0.3
Max
5
100
10
15
20
0.6
Unit
V
nA
V
V
V
pF
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1
REV.01 20140930