YSESDAR5V0P-10P Datasheet, PDF (1/4 Pages) Yea Shin Technology Co., Ltd – SMD ESD Protection Diode

DATA SHEET
SEMICONDUCTOR
SMD ESD Protection Diode
FEATURES
◆ IEC61000-4-2 (ESD)±14kV(Contact),±15kV(Air).
◆ Working voltage: 5.0 V
◆ _{Low leakage current.}
◆ _{Low capacitance: 0.25 pF typical (I/O to GND)}
MECHANICAL CHARACTERISTICS
◆ Case: DFN10p package,molded plastic.
◆ _{Terminals: Gold plated, solderable per}
MIL-STD-750,method 2026.
◆ _{Mounting position: Any}
Circuit diagram
I/O
Pin 1
I/O
Pin 2
I/O
Pin 4
I/O
Pin 5
Package
N/C N/C
N/C N/C
10 9 8 7 6
YSESDAR5V0P-10P
H
DFN10P
0.100(2.55)
0.096(2.45)
0.041(1.05)
0.037(0.95)
0.008(0.20) Typ.
0.016(0.40) Typ.
0.022(0.55)
0.018(0.45)
GND
12345
GND
Pin 3
I/O I/O
I/O I/O
Maximum Rating (at TA=25 °C unless otherwise noted)
Parameter
Symbol
Peak pulse power ( tp = 8/20 us)
PPP
Peak pulse current ( tp = 8/20 us)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating temperature range
Storage temperature range
IPP
ESD
TJ
TSTG
Electrical Characteristics (at TA=25 °C unless otherwise noted)
Parameter
Conditions
Symbol
Reverse stand-off voltage
VRWM
Breakdown voltage
IR = 1mA
VBR
Leakage current
Clamping voltage
Junction capacitance
http://www.yeashin.com
VR = 5.0V
IL
IPP = ±1 A, Tp=8/20us,
Any Channel Pin to Ground
VC
IPP = ±2 A, Tp=8/20us,
Any Channel Pin to Ground
VC
VR = 0 V, f = 1MHz
Any Channel Pin to Ground
Cj
1
0.014(0.35) Typ.
Dimensions in inches and (millimeters)
Value
60
3
±15
±14
-55 to +125
-55 to +150
Unit
W
A
kV
°C
°C
Min
Typ
Max Unit
5
V
6.0
V
50
nA
11
V
13
V
0.25
pF
REV.01 20150530