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UF1AS Datasheet, PDF (1/3 Pages) Yea Shin Technology Co., Ltd – SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts
DATA SHEET
SEMICONDUCTOR
U F1AS THRU UF1MS
SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts
ULTRA FAST RECTIFIERS FORWARD CURRENT - 1.0 Ampere
H : Halogen Free
: Pb Free
FEATURES
• • Glass passivated chip
• • Ultra fast switching for high efficiency
• • For surface mounted applications
• • Low forward voltage drop and high current capability
• • Low reverse leakage current
• • Plastic material has UL flammability classification 94V-0
• • High temperature soldering : 260OC / 10 seconds at terminals
• • Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
SOD-123S Unit:inch(mm)
0.112(2.85)
0.100(2.55)
0.047(1.20)
MAX
MECHANICAL DATA
• • Case : Molded plastic
• • Polarity : Indicated by cathode band
• • Weight : 0 .01 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25• • ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
0.152(3.85)
0.140(3.55)
0.014(0.35)
MIN
CHARACTERISTICS
MARKING CODE
SYMBOL UF1AS UF1BS UF1DS UF1GS UF1JS UF1KS UF1MS
U1
U2
U3
U4
U5
U6
U7
UNIT
Maximum Recurrent Peak Reverse V oltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward
I(AV)
1.0
A
Rectified Current
@TL =75°C
Peak Forward Surge Current
8.3ms single ha lf sine- wave
IFSM
30
A
super imposed on rated load (JEDEC METHOD)
Maxi mum f orward Voltage at 1.0A DC
VF
1.0
1.3
1.5
1.7
V
Maxi mum DC Reverse Cur rent
at Rated DC Blocking Voltage
@TJ =25°C
IR
@TJ =100°C
5
uA
100
Maximum Reverse Recovery Time (Note 1)
TRR
50
75
ns
Typical Junction
Capacitance (Note 2)
CJ
20
10
pF
Typical Thermal Resistance (Note 3)
RθJL
30
°C/W
Operating Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
TSTG
-55 to +150
°C
NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance junction to Lead.
http://www.yeashin.com
1
REV.02 20110725