SS8050 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – TRANSISTOR (NPN)

DATA SHEET
SEMICONDUCTOR
TO-92 Plastic-Encapsulate Transistors
FEATURES
Power dissipation
P_CM : 1 W
:2W
(T_A=25℃)
(T_C=25℃)
SS8050
TRANSISTOR (NPN)
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS* T_A=25℃ unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
TJ, Tstg
Junction and Storage Temperature
Value
40
25
5
1500
-55-150
123
Units
V
V
V
mA
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO Ic=100uA, IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO Ic=0.1mA, IB=0
25
Emitter-base breakdown voltage
V(BR)EBO IE=100µA, IC=0
5
Collector cut-off current
ICBO
VCB=40V, IE=0
Emitter cut-off current
ICEO
VCE=20V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE(1) VCE=1V, IC=100mA
85
hFE(2) VCE=1V, IC=800mA
40
Collector-emitter saturation voltage
VCE(sat) IC=800mA, IB=80mA
Base-emitter saturation voltage
VBE(sat) IC=800mA, IB=80mA
Base-emitter voltage
VBE
VCE=1V, IC=10mA
Transition frequency
fT
VCE=10V, IC=50mA,f=30MHZ
100
V
V
V
0.1
µA
0.1
µA
0.1
µA
400
0.5
V
1.2
V
1
V
MHz
CLASSIFICATION OF h_FE(2)
Rank
B
C
D
E
Range
85-160
120-200
160-300
300-400
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REV.02 20120705