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SF11G Datasheet, PDF (1/2 Pages) Jinan Gude Electronic Device – 1.0 AMPS. GLASS PASSIVATED SUPER FAST RECTIFIERS
DATA SHEET
SEMICONDUCTOR
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE - 50 to 8 00 Volts CURRENT - 1.0 Ampere
SF11G~SF18 G
FEATURES
• Superfast recovery times-epitaxial construction
• Low forward voltage, high current capability
• Exceeds environmental standards of MIL-S-19500/228
• Hermetically sealed
• Low leakage
• High surge capability
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
• High temperature soldering : 260OC / 10 seconds at terminals
• Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
MECHANICAL DATA
• Case: Molded plastic, DO-41
• Terminals: Axial leads, solderable to MIL-STD-202,
Method 208
• Polarity: Color Band denotes cathode end
• Mounting Position: Any
• Weight: 0.012 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C J ambient temperature unless otherwise specified.
Resistive or inductive load, 60Hz.
DO-41 Unit:inch(mm)
.107 (2.7)
.080 (2.0)
DIA.
.034 (.86)
.028 (.71)
DIA.
1.0 (25.4)
MIN.
.205 (5.2)
.160 (4.1)
1.0 (25.4)
MIN.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Current .375"(9.5mm) lead length
at TA=55°C J
Peak Forward Surge Current, IFM (surge):
8.3ms single half sine-wave superimposed
on rated load(JEDEC method)
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum DC Reverse Current at
Rated DC Blocking Voltage TA=125°C
Maximum Reverse Recovery Time(Note 1)
Typical Junction capacitance (Note 2)
Typical Junction Resistance(Note 3)
Operating and Storage Temperature Range TJ
SYMBOLS
VRRM
VRMS
VDC
SF11G
50
35
50
SF12G
100
70
100
SF13G
150
105
150
SF14G
200
140
200
SF15G
300
210
300
SF16G
400
320
400
SF17G
600
420
600
SF18G
800
640
800
UNITS
V
V
V
I(AV)
1.0
A
IFSM
VF
IR
IR
TRR
CJ
RθJA
TJ,TSTG
30.0
0.95
1.25
5.0
150
35.0
17
50
-55to +150
A
1.7
V
uA
uA
nS
pF
°C /W
°C
NOTES:
1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
3. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted
http://www.yeashin.com
1
REV.02 20110725