SD103AW Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY BARRIER DIODES

DATA SHEET
SEMICONDUCTOR
SCHOTTKY DIODES
FEATURES
z Low Forward Voltage Drop
z Guard Ring Construction for Transient Protection
z Negligible Reverse Recovery Time
z Low Reverse Capacitance
SD103AW/BW/CW
H
SOD123 Unit:inch(mm)
MARKING: SD103AW: S4
SD103BW: S5
SD103CW: S6
Symbol
A
A1
A2
b
c
D
E
E1
L
L1
θ
Dimensions In Millimeters
Min
1.050
Max
1.250
0.000
0.100
1.050
1.150
0.450
0.650
0.080
0.150
1.500
1.700
2.600
2.800
3.550
3.850
0.500 REF
0.250
0.450
0°
8°
Dimensions In Inches
Min
0.041
Max
0.049
0.000
0.004
0.041
0.045
0.018
0.026
0.003
0.006
0.059
0.067
0.102
0.110
0.140
0.152
0.020 REF
0.010
0.018
0°
8°
Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃
Parameter
Symbol
SD103AW
SD103BW
Peak Repetitive Peak reverse voltage
V_RRM
Working Peak
V_RWM
40
30
DC Blocking Voltage
V_R
RMS Reverse Voltage
V_R(RMS)
28
21
Forward Continuous Current
I_FM
350
Repetitive Peak Forward Current @t≤1.0s
I_FRM
1.5
Power Dissipation
Pd
400
Thermal Resistance Junction to Ambient
Storage temperature
R_θJA
T_STG
300
-55~+150
Electrical Ratings @T_A=25℃
Parameter
Symb
Min.
ol
Typ.
Max. Unit
Reverse Breakdown Voltage SD103AW
40
SD103BW V _(BR)R 30
V
SD103CW
20
Forward voltage
Reverse current
V_F
SD103AW
SD103BW I_RM
SD103CW
0.37
V
0.60
5.0
µA
Capacitance between terminals
C_T
50
pF
Reverse Recovery Time
t_rr
10
ns
http://www.yeashin.com
1
SD103CW
20
14
Unit
V
V
mA
A
mW
℃/W
℃
Conditions
IR=10µA
IR=10µA
IR=10µA
I_F=20mA
I_F=200mA
V_R=30V
V_R=20V
V_R=10V
V_R=0V,f=1.0MHz
I_F=I_R=200mA
Irr=0.1XI_R,R_L=100Ω
REV.02 20120305