RB501V-40FL Datasheet, PDF (1/3 Pages) Yea Shin Technology Co., Ltd – Schottky Barrier Diode

DATA SHEET
SEMICONDUCTOR
200mW SOD-323 SURFACE MOUNT
Small Outline Flat Lead Plastic Package
Schottky Barrier Diode
RB501V-40FL
H
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
200
mW
TSTG
Storage Temperature Range
-65 to +125
°C
TJ
Operating Junction Temperature
+125
°C
VRM
Repetitive Peak Reverse Voltage
40
V
VR
Maximum DC Blocking Voltage
40
V
IF(AV)
Average Forward Rectified Current
100
mA
IFSM
Peak Forward Surge Current
(8.3mS Single Half-wave)
1
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
 Low Forward Voltage Drop
 Flat Lead SOD-323 Small Outline Plastic Package
 Surface Device Type Mounting
 RoHS Compliant
 Green EMC
 Matte Tin(Sn) Terminal Finish
 Band Indicates Cathode
SOD-323 Flat Lead
DEVICE MARKING CODE:
Device Type
RB501V-40
Device Marking
B4
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Condition
BV
Breakdown Voltage
IR
Reverse Leakage Current
VF
Forward Voltage
TCBAT42WS,
IR=500µA
VR=10V
IF=10mA
IF=100mA
Limits
Min Max
42
30
0.340
0.550
Unit
Volts
µA
Volts
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REV.02 20120305