MMBTH10Q Datasheet, PDF (1/5 Pages) Yea Shin Technology Co., Ltd – VHF/UHF Transistors

DATA SHEET
SEMICONDUCTOR
VHF/UHF Transistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V _CEO
V _CBO
V _EBO
25
Vdc
30
Vdc
3.0
Vdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
MMBTH10QL = 3EQ
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I _C = 1.0 mAdc, I _B= 0 )
Collector–Base Breakdown Voltage
(I _C = 100 µAdc , I _E = 0)
Emitter–Base Breakdown Voltage
(I _E = 10 µAdc , I _C= 0)
Collector Cutoff Current
( V _CB = 25Vdc , I _E = 0 )
Emitter Cutoff Current
( V _EB = 2.0Vdc , I _C= 0 )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
V _(BR)CEO
25
—
V _(BR)CBO
30
—
V _(BR)EBO
3.0
—
I _CBO
I _EBO
—
—
—
—
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
MMBTH10Q
H
SOT–23 (TO–236AB)
3
1
1
BASE
2
3
COLLECTOR
2
EMITTER
Max
Unit
—
Vdc
—
Vdc
—
Vdc
100
nAdc
100
nAdc
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REV.02 20120703