MMBT918 Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – VHF/UHF NPN SILICON TRANSISTOR

DATA SHEET
SEMICONDUCTOR
VHF / UFH Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V _CEO
V _CBO
V _EBO
I_C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
Value
15
30
3.0
50
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
MMBT918
H
SOT–23 (TO–236AB)
3
1
1
BASE
2
3
COLLECTOR
2
EMITTER
MMBT918 = M3B
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I _C = 3.0 mAdc, I _B = 0)
Collector–Base Breakdown Voltage
(I _C = 1.0 µAdc, I _E = 0)
Emitter–Base Breakdown Voltage
(I _E = 10 µAdc, I _C = 0)
Collector Cutoff Current
( V _CB = 15 Vdc, I _E = 0)
V _(BR)CEO
15
V _(BR)CBO
30
V _(BR)EBO
3.0
I _CBO
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
—
Vdc
—
Vdc
—
Vdc
50
nAdc
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REV.02 20120705