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MMBT5401 Datasheet, PDF (1/5 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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DATA SHEET
SEMICONDUCTOR
High Voltage Transistor
FEATURE
ƽ We declare that the material of product compliance with RoHS requirements.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
MMBT5401
2L
3000/Tape&Reel
MMBT5401
H
MAXIMUM RATINGS
Rating
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT5401 = 2L
Symbol
V CEO
V CBO
V EBO
IC
Value
â 150
â 160
â 5.0
â 500
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
Max
225
Unit
mW
R θJA
PD
1.8
mW/°C
556
°C/W
300
mW
R θJA
T J , Tstg
2.4
417
â55 to+150
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage
(I C = â1.0 mAdc, I B = 0)
CollectorâBase Breakdown Voltage
(I C = â100 µAdc, I E = 0)
Emitter-BAse Breakdown Voltage
(I E= â10µAdc,I C=0)
Collector Cutoff Current
(V CB = â120 Vdc, IE= 0)
V (BR)CEO
V (BR)CBO
V(BR)EBO
I CES
(V CB = â120 Vdc, IE= 0, T A=100 °C)
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Min
â 150
â 160
-5.0
â
â
SOTâ 23
1
BASE
3
COLLECTOR
2
EMITTER
Max
Unit
Vdc
â
Vdc
â
Vdc
â
â 50
nAdc
â 50
µAdc
http://www.yeashin.com
1
REV.02 20120703
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