MMBT3946DW Datasheet, PDF (1/5 Pages) Yea Shin Technology Co., Ltd – COMPLEMENTARY NPN/PNP TRANSISTOR

DATA SHEET
SEMICONDUCTOR
MMBT3946DW
COMPLEMENTARY NPN/PNP TRANSISTOR
H
FEATURES
z Complementary Pair
z One 3904-Type NPN,
One 3906-Type PNP
6
5
4
z Epitaxial Planar Die Construction
z Ideal for Low Power Amplification and Switching
MAKING: 46
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
1
2
3
SOT–363/SC–88
CASE 419B STYLE 1
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Units
(3)
60
V
40
V
5
V
Q₁
0.2
A
0.2
W
(4)
150
℃
-55-150
℃
(2)
(1)
Q₂
(5)
(6)
NPN 3904 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Noise figure
Output Capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
NF
Cob
td
tr
tS
tf
Test conditions
IC = 10μA, IE=0
IC= 1mA, IB=0
IE= 10μA, IC=0
VCB= 30 V , IE=0
VCE= 30 V , IB=0
VEB= 5V , IC=0
VCE= 1V, IC= 0.1mA
VCE= 1V, IC= 1mA
VCE= 1V, IC= 10mA
VCE= 1V, IC= 50mA
VCE= 1V, IC= 100mA
IC=10 mA, IB= 1mA
IC=50 mA, IB= 5mA
IC= 10 mA, IB= 1mA
IC= 50 mA, IB= 5mA
VCE=20V,IC=20mA, f=100MHz
VCE=5V,Ic=0.1mA,
f=1KHz,Rg=1KΩ
VCB=5V,IE=0,f=1MHz
VCC=3V, VBE=0.5V
IC=10mA , IB1=- IB2=1mA
VCC=3V, IC=10mA
IB1=-IB2= 1mA
MIN
60
40
5
40
70
100
60
30
0.65
300
MAX
0.05
0.5
0.05
300
0.2
0.3
0.85
0.95
5
4
35
35
200
50
UNIT
V
V
V
μA
μA
μA
V
V
V
V
MHz
dB
pF
nS
nS
nS
nS
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1
REV.02 20120703