MMBT3906DW Datasheet, PDF (1/3 Pages) Yea Shin Technology Co., Ltd – DUAL TRANSISTOR

DATA SHEET
SEMICONDUCTOR
DUAL TRANSISTOR(PNP)
MMBT3906DW
H
6
FEATURES
·Epitaxial planar die construction
·Ideal for low power amplification and switching
Q₂
5
4
6
5
4
Q₁
1
2
MARKING:A2
3
SOT–363/SC–88
MAXIMUM RATINGS(T_A=25℃ unless otherwise noted) ¹
2
3
CASE 419B STYLE 1
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-40
VCEO
Collector-Emitter Voltage
-40
VEBO
Emitter-Base Voltage
-5
IC
Collector Current -Continuous
-0.2
PC
Collector Power Dissipation
0.2
RθJA
TJ
Tstg
Thermal Resistance. Junction to Ambient Air
Junction Temperature
Storage Temperature
625
150
-55-150
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Units
V
V
V
A
W
℃/W
℃
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
NF
td
tr
tS
tf
Test conditions
IC=-10μA,IE=0
IC=-1mA,IB=0
IE=-10μA,IC=0
VCE=-30V,VEB(OFF)=-3V
VEB=-5V,IC=0
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
VCE=-1V,IC=-50mA
VCE=-1V,IC=-100mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
VCE=-20V,IC=-10mA,f=100MHz
VCB=-5V,IE=0,f=1MHz
VCE=-5V,Ic=-0.1mA,f=1kHz,Rg=1KΩ
VCC=-3V, VBE=0.5V
IC=-10mA , IB1=-IB2=-1mA
VCC=-3V, IC=-10mA
IB1=-IB2=- 1mA
MIN TYP MAX UNIT
-40
V
-40
V
-5
V
-50 nA
-50 nA
60
80
100
300
60
30
-0.25 V
-0.4
V
-0.65
-0.85 V
-0.95 V
250
MHz
4.5
pF
4
dB
35
nS
35
nS
225 nS
75
nS
http://www.yeashin.com
1
REV.02 20120705