MMBT3904DW Datasheet, PDF (1/3 Pages) Yea Shin Technology Co., Ltd – Epitaxial planar die construction

DATA SHEET
SEMICONDUCTOR
DUAL TRANSISTOR（NPN）
MMBT3904DW
H
FEATURES
z Epitaxial planar die construction
z Ideal for low power amplification and switching
MARKING:MA
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
40
5
0.2
0.2
150
-55-150
Units
V
V
V
A
W
℃
℃
6
5
4
1
2
3
SOT–363/SC–88
CASE 419B STYLE 1
6
5
4
Q₂
Q₁
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
NF
t_d
t_r
t_S
t_f
IC=10μA,IE=0
IC=1mA,IB=0
IE=10μA,IC=0
VCB=30V,IE=0
VEB=5V,IC=0
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
VCE=20V,IC=10mA,f=100MHz
VCB=5V,IE=0,f=1MHz
VCE=5V,Ic=0.1mA,f=1kHz,RS=1KΩ
VCC=3V, VBE(off)=-0.5V
IC=10mA , IB1=-IB2= 1mA
VCC=3V, IC=10mA
IB1=-IB2=1mA
60
40
5
40
70
100
60
30
0.65
300
MAX
0.05
0.05
UNIT
V
V
V
μA
μA
300
0.2
V
0.3
V
0.85
V
0.95
V
MHz
4
pF
5
dB
35
nS
35
nS
200 nS
50
nS
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1
REV.02 20120705