MMBD914 Datasheet, PDF (1/3 Pages) Zowie Technology Corporation – HIGH-SPEED SWITCHING DIODE

DATA SHEET
SEMICONDUCTOR
High−Speed Switching
Diode
MMBD914
H
SOT–23 (TO–236AB)
Features
• Pb−Free Package May be Available. The G−Suffix Denotes a
3
Pb−Free Lead Finish
MAXIMUM RATINGS
5D
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Symbol
V_R
I_F
I_FM(surge)
Value
100
200
500
Unit
Vdc
mAdc
mAdc
1
3
CATHODE
2
1
ANODE
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR–5 Board (Note 1.)
T_A = 25°C
Derate above 25°C
P_D
225
mW
1.8
mW/°C
5D = Device Code
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
Alumina Substrate (Note 2.)
T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
ORDERING INFORMATION
300
mW
Device
MMBD914
2.4
mW/°C
Package
Shipping^†
SOT−23 3000/Tape & Reel
Thermal Resistance,
Junction to Ambient
R_qJA
417
°C/W
Junction and Storage
Temperature Range
T_J, T_stg
–55 to
°C
+150
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I_R = 100 mAdc)
V_(BR)
100
–
Vdc
Reverse Voltage Leakage Current
I_R
(V_R = 20 Vdc)
(V_R = 75 Vdc)
–
25
nAdc
–
5.0
mAdc
Diode Capacitance
(V_R = 0, f = 1.0 MHz)
C_T
–
4.0
pF
Forward Voltage
(I_F = 10 mAdc)
V_F
–
1.0
Vdc
Reverse Recovery Time
t_rr
(I_F = I_R = 10 mAdc) (Figure 1)
–
4.0
ns
1. FR–5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
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1
REV.02 20120305