MBR1020F Datasheet, PDF (1/3 Pages) Micro Commercial Components – 10 Amp Schottky Barrier Rectifier 20 to 100 Volts

DATA SHEET
SEMICONDUCTOR
MBR1020F~MBR10200F
10A SCHOTTKY BARRIE R RECTIFIER
FEATURES
ITO-220AC
• Schottky Barrier Chip
• Guard Ring for Transient Protection
• High Current Capability, Low Forward
• Low Reverse Leakage Current
• High Surge Current Capability
• Plastic Material has UL Flammability
Classification 94V-O
• High temperature soldering : 260^OC / 10 seconds at terminals
• Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
MECHANICAL DATA
• Case:ITO-220AC Molded Plastic
• Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
• Polarity: As Marked on Body
• Weight: 2.24 grams (approx.)
• Mounting Position: Any
• Marking: Type Number
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Unit:inch(mm)
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Repetitive Forward Current (Square Wave,
20KHz) at Tc=135^oC
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Voltage Rate of Change (Rated V_R)
Maximum Instantaneous Forward Voltage at
(Note 2)
I_F=10A, Tc=25^OC
Symbol
V_RRM
V_RMS
V_DC
MBR
1020F
MBR
1030F
MBR
1040F
MBR
1050F
MBR
1060F
MBR
1080F
MBR MBR
10100F 10150F
MBR
10200F
Units
20 30 40 50 60 80 100 150 200 ^V
14 21 28 35 42 56 70 105 ₁₄₀ V
20 30 40 50 60 80 100 150 200 ^V
I_(AV)
10
A
I_FRM
20.0
A
I_FSM
150
A
I_RRM
1
0.5
A
dV/dt
10,000
V/uS
V_F
0.55
0.70
0.75
0.85
0.95 0.99
V
Maximum Instantaneous Reverse Current
@ Tc =25 at Rated DC Blocking Voltage (Note 2)
@ Tc=125
I_R
0.1
15.0
Typical Junction Capacitance (Note 3)
Cj
350
Maximum Thermal Resistance, Junction to Case
RθJC
Operating Junction Temperature Range
Storage Temperature Range
T_J
TSTG
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate.
0.1
6.0
280
3.5
-55 to +150
-55 to +150
0.025
mA
10
mA
200
pF
2.0
/W
http://www.yeashin.com
1
REV.02 20150105