M8550 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR （ PNP ）

SEMICONDUCTOR
DATA SHEET
M8550
Plastic-Encapsulate Transistors (PNP)
FEATURES
Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-800
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150 ℃
TO-92
1.EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC= -100μA, IE=0
-40
Collector-emitter breakdown voltage V(BR)CEO* IC= -0.1mA , IB=0
-25
Emitter-base breakdown voltage
V(BR)EBO IE= -100μA, IC=0
-6
Collector cut-off current
ICBO
VCB= -35V , IE=0
Collector cut-off current
ICEO
VCE= -20V , IB=0
hFE(1)
VCE=-1V, IC=-5mA
45
DC current gain
hFE(2)
VCE=-1V, IC=-100mA
80
hFE(3)
VCE=-1V, IC=-800mA
40
Collector-emitter saturation voltage
VCE(sat) IC= -800mA, IB=-80mA
Base-emitter saturation voltage
VBE(sat) IC=-800mA, IB=-80mA
Transition frequency
VCE=-6V, IC= -20mA
fT
150
f=30MHz
*Pulse Test: pulse width ≤ 300µs,duty cycle ≤2%.
CLASSIFICATION OF hFE₍₂₎
Rank
B
Range
80-160
C
120-200
D
160-300
Max
-0.1
-0.1
400
-0.5
-1.2
Unit
V
V
V
μA
μA
V
V
MHz
D3
300-400
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REV.02 20140401