M8050 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR （ NPN ）

DATA SHEET
SEMICONDUCTOR
TRANSISTOR (NPN)
FEATURES
Power dissipation
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
M8050
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
25
6
800
625
125
-55-125
Units
V
V
V
mA
mW
℃
℃
TO-92
1.EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
123
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA,IE=0
40
V
Collector-emitter breakdown voltage V(BR)CEO* IC= 1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 35V, IE=0
0.1
μA
Collector cut-off current
ICEO
VCE= 20V, IB=0
0.1
μA
hFE(1)
VCE=1V, IC=5mA
45
DC current gain
hFE(2)
VCE=1V, IC=100mA
80
400
hFE(3)
VCE=1V, IC=800mA
40
Collector-emitter saturation voltage
VCE(sat) IC= 800mA, IB=80mA
0.5
V
Base-emitter saturation voltage
VBE(sat) IC=800mA, IB= 80mA
1.2
V
Transition frequency
fT
VCE=6V, IC= 20mA , f=30MHz
150
MHz
* Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%.
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