LL4448 Datasheet, PDF (1/3 Pages) Semtech Corporation – Silicon Expitaxial Planar Diode

SEMICONDUCTOR
DATA SHEET
LL4148/ LL4448/ LL914B
500 mW LL-34 Hermetically
Sealed Glass Fast Switching
Diodes
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
500
mW
TSTG
Storage Temperature Range
-65 to +200
°C
TJ
Operating Junction Temperature
+175
°C
WIV
Working Inverse Voltage
75
V
IO
Average Rectified Current
150
mA
IFM
Non-repetitive Peak Forward Current
450
mA
IFSURGE
Peak Forward Surge Current
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
SURFACE MOUNT
LL34
DEVICE MARKING DIAGRAM
Cathode Band Color : Black
Fast Switching Device (TRR <4.0 nS)
LL-34 (Mini-MELF) Package
Surface Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
1^st band indicates negative polarity
Cathode
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Condition
BV
Breakdown Voltage
IR
Reverse Leakage Current
VF
Forward Voltage
LL4448, LL914B
TCLL4148, LL4148
LL4448, LL914B
IR=100µA
IR=5µA
VR=20V
VR=75V
IF=5mA
IF=10mA
IF=100mA
Limits
Min Max
100
75
25
5
0.62 0.72
1.0
1.0
Unit
Volts
nA
µA
Volts
TRR
Reverse Recovery Time
C
Capacitance
IF=IR=10mA
RL=100Ω
IRR=1mA
VR=0V, f=1MHZ
4
nS
4
pF
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