HER501 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – HIGH EFFICIENCY RECTIFIERS(5.0A,50-400V)

SEMICONDUCTOR
DATA SHEET
HER501 THRU HER508
5.0AMP HIGH EFFICIENT RECTIFIERS
VOLTAGE RANGE: 50 TO 1000 VOLTS
FEATURES
. Low cost
. Diffused junction
. Low Leakage
. Low forward voltage
. High current capability
. Easily cleaned with Freon. Alcohol. Lsopropanol and similar
solvents
. _{The plastic material carries U/L recognition 94 V-O}
MECHANICAL DATA
• Case: Molded plastic , DO-201AD
• Terminals: Plated axial leads, solderable per MIL-STD-202,
Method 208
• Polarity: Color band denotes cathode
• Mounting Position: Any
• Weight: 0.04 ounce, 1.1 grams
DO-201AD Unit:inch(mm)
.210 (5.3)
.188 (4.8)
DIA.
.052 (1.3)
.048 (1.2)
DIA.
1.0 (25.4)
MIN.
.375 (9.5)
.285 (7.2 )
1.0 (25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ℃ ambient temperature unless otherwise specified.
Single phase. half wave. 60HZ. resistive or inductive load. For capacitive load. derate current by 20％
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current 9.5mm Lead Length. TA =55 °C
Peak Forward Surge Current
8.3ms Single Single half-sine-wave superimposed
on rated Tj=125 °C
Maximum Forward Voltage at 5.0A DC
Maximum Reverse Current TA = 25 °C
at Rated DC Blocking Voltage TA = 100 °C
Typical Junction Capacitance ( Note 1 )
Maximum reverse recovery time (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL HER501 HER502 HER503 HER504 HER505 HER506 HER507 HER508 UNITS
VRRM 50 100 200 300 400 600 800 1000 V
VRMS 35 70 140 210 280 420 560 700 V
VDC
50 100 200 300 400 600 800 1000 V
I(AV)
5.0
A
IFSM
VF
IR
Cj
Trr
Tj
TSTG
200
1.0
1.3
10.0
200.0
80
50
- _{55 to 150}
- _{55 to 150}
A
1.7
V
µA
50
pF
75
ns
°C
°C
NOTE: 1. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC.
2. Thermal resistance junction to ambient.
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REV.02 20110725