GBJ8005 Datasheet, PDF (1/2 Pages) Diodes Incorporated – 8.0A GLASS PASSIVATED BRIDGE RECTIFIER

DATA SHEET
SEMICONDUCTOR
8.0A GLASS PASSIVATED
BRIDGE RECTIFIER
FEATURES
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 170A Peak
Ideal for Printed Circuit Board Applications
K
Plastic Material - UL Flammability
Classification 94V-0
UL Listed Under Recognized Component
Index, File Number E94661
J
High temperature soldering : 260^OC / 10 seconds at terminals H
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
I
MECHANICAL DATA
Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx.)
Marking: Type Number
GBJ8005 THRU GBJ810
GBJ
Dim
Min
Max
A
29.70 30.30
L
B
19.70 20.30
A
M
C
17.00 18.00
D
3.80 4.20
B
_
S
N
D
P
C
R
E
7.30 7.70
G
9.80 10.20
H
2.00 2.40
I
0.90 1.10
J
2.30 2.70
K
3.0 X 45°
L
4.40 4.80
G EE
M
3.40 3.80
N
3.10 3.40
P
2.50 2.90
R
0.60 0.80
S
10.80 11.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25 unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
GBJ
8005
GBJ
801
GBJ
802
GBJ
804
GBJ
806
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
50
100 200 400 600
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS) 35
70
140 280 420
Average Forward Rectified Output Current
IO
8.0
@ TC= 110
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
IFSM
170
(JEDEC method)
Forward Voltage per element
@ IF = 4.0A
VFM
1.0
Peak Reverse Current
@TC = 25
5.0
IR
at Rated DC Blocking Voltage
@ TC = 125
500
I2t Rating for Fusing (t < 8.3ms) (Note 1)
I2t
120
Typical Junction Capacitance per Element (Note 2)
Cj
55
Typical Thermal Resistance, Junction to Case (Note 3)
R_JC
1.8
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
Notes: 1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 100 x 100 x 1.6mm aluminum plate heat sink.
GBJ
808
800
560
GBJ
Unit
810
1000 V
700 V
A
A
V
A
A2s
pF
/W
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