G2A Datasheet, PDF (1/2 Pages) General Semiconductor – GLASS PASSIVATED JUNCTION RECTIFIER

DATA SHEET
SEMICONDUCTOR
GPP SURFACE MOUNT RECTIFIER
VOLTAGE- 50 to 1000 Volts CURRENT - 2.0 Amperes
G2 A THRU G2 M
SMF Unit: inch ( mm )
FEATURES
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Easy pick and place
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Low Forward Drop
• High temperature soldering : 260°C /10 seconds at terminals
0.141(3.60)
0.126(3.20)
0.052(1.30)
0.043(1.10)
MECHANICAL DATA
Case: SMF molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
nds0.050MIN
(1.27MIN)
minals
0.87MAX
(2.20MAX)
0.201REF
(5.1REF)
0.189(4.80)
0.173(4.40)
0.035(0.90)TYPICAL
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SY MBOLS G2A
G 2B
G2D
G2G G2J
G2K
G2M
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current,
at T L=75°C
V_RRM
50
100
200
400
600
800 1000
V
V_RMS
35
70
140
280
420
560
700
V
V_DC
50
100
200
400
600
800 1000
V
I(AV)
2. 0
A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
I _FSM
60
A
Maximum Instantaneous Forward Voltage at 2.0A
Maximum DC Reverse Curren
TA =25°C
at Rated DC Blocking Voltage
TA _=125°C
Maximum Reverse Recovery Time(Note 1) TJ=25°C
Typical Junction Capacitance (Note 2)
Maximum Thermal Resistance(Note 3)
Operating and Storage Temperature Range
VF
IR
TRR
CJ
R^Ó© JA
TJ,TSTG
1. 1
5. 0
100
2. 5
12
75
- 55 t o +150
V
µA
µA
µs
pF
°C/ W
°C
NOTES:
1. Reverse Recovery Test Conditions: I F=0.5A, I _R=1.0A, I rr =0.25A
2. Measured at 1 MHz and applied V r= 4.0 volts.
3. 8.0 mm² ( .013mm thick ) land areas.
http://www.yeashin.com
1
REV.02 20150105