FG1001F Datasheet, PDF (1/3 Pages) Yea Shin Technology Co., Ltd – FAST RECOVERY

DATA SHEET
SEMICONDUCTOR
FG1001F~FG1007F
FAST RECOVERY
GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 10.0 Amperes
FEATURES
• Fast sw itching
• Low leakage
• Low forward voltage drop
• High current capability
• High surge capability
• High reliability
• High temperature soldering : 260°C/ 10 seconds at terminals
• Pb free product a t available : 99% Sn above meet RoHS environment
substance directive request.
MECHANICAL DATA
• Ca se: ITO-220AC molded plastic
• Epoxy : Device has UL flammability cla ssi fication 94 V-O
• Lead: MIL-STD-202E method 208C guaranteed
• Mounting position: Any
• W eight: 2.24 grams
• Polarity: As m arking
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ITO-220A C Unit:inch(mm)
MAXIMUM RATINGS (At TA = 25°C unless otherwise noted)
RATINGS
SYMBOL FG1001F FG1002F FG1003F FG1004F FG1005F FG1006F FG1007F UNITS
Maximum Recurrent Peak Reverse V oltage
VRRM
50
100
200
400
600
800
1000 Volts
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700 Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000 Volts
Maximum Average Forward Rectif ied Current at TC = 75°C
IO
10.0
Amps
Peak Forward Surge Current 8.3 ms single half sine- wav e
super imposed on rated load (J EDEC method)
I FSM
150
Amps
Typical Thermal Resistance (Note 3 )
RθJC
3
°C/ W
Typi cal Junction Capaci tance (Note 2)
CJ
50
pF
Operati ng and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (At TA = 25°C unless otherwise noted)
CHARACTERISTICS
SYMBOL FG1001F FG1002F FG1003F FG1004F FG1005F FG1006F FG1007F UNITS
Maximum Instantaneous Forward Voltage at 10.0A DC
VF
1.3
Volts
Maxi mum DC Reverse Cur rent
at Rated DC Block ing Vol tage TA = 25°C
IR
Maximum Full Load Reverse Current Average,
Full Cycle at TC = 100 °C
10
uAmps
150
uAmps
Maximum Reverse Recovery Time (Note 1)
trr
150
250
500
nSec
NOTES : 1. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts
3. Thermal Resistance Junction to Case.
4. Suffix “R” for Reverse Polarity.
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1
REV.02 20150105