BCX70G Datasheet, PDF (1/7 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR

DATA SHEET
SEMICONDUCTOR
BCX70G-J-K
General Purpose Transistors
NPN Silicon
Featrues
Pb-Free Package is Available.
H
SOT–23 (TO–236AB)
Ordering Information
Device
BCX70G
BCX70J
BCX70K
Marking
AG
AJ
AK
MAXIMUM RATINGS
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
45
Vdc
45
Vdc
5.0
Vdc
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
225
1.8
556
300
2.4
417
–55 to +150
DEVICE MARKING
BCX70G = AG ; BCX70J = AJ ; BCX70K = AK
3
12
1
BASE
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
3
COLLECTOR
2
EMITTER
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 2.0mAdc, I_E = 0 )
V _(BR)CEO
45
Emitter–Base Breakdown Voltage
(I _E= 1.0 µAdc, I _C = 0)
V _(BR)EBO
5.0
Collector Cutoff Current
(V_CE = 32 Vdc, )
(V_CE = 32 Vdc, T_A = 150°C )
I _CES
—
—
Emitter Cutoff Current
(V_EB = 4.0 Vdc, I _C = 0 )
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
I _EBO
—
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://www.yeashin.com
1
—
Vdc
—
Vdc
20
nAdc
20
µAdc
20
nAdc
REV.02 20120403