BCW68G Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

DATA SHEET
SEMICONDUCTOR
General Purpose Transistors
BCW68G
H
PNP Silicon
Pb-Free package is available
We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
Device
Marking
BCW68G
DG
MAXIMUM RATINGS
Shipping
3000/Tape&Reel
SOT–23 (TO–236AB)
3
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V _CEO
V _CBO
V EBO
Collector Current — Continuous I _C
Value
– 45
– 60
– 5.0
– 800
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
225
1.8
556
300
2.4
417
–55 to +150
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Symbol
Collector–Emitter Breakdown Voltage (I_C = –10 mAdc, I_B = 0 )
Collector–Emitter Breakdown Voltage (I_C = –10 µAdc, V_EB = 0 )
Emitter–Base Breakdown Voltage (I _E= –10 µAdc, I _C = 0)
Collector Cutoff Current
(V_CE = –45 Vdc, I _E= 0 )
(V_CE = –45 Vdc, I _B= 0 , T_A = 150°C)
Emitter Cutoff Current (V_EB = – 4.0 Vdc, I _C = 0)
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V _(BR)CEO
V _(BR)CES
V _(BR)EBO
I _CES
I _EBO
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Min
– 45
– 60
– 5.0
—
—
—
1
1
BASE
Typ Max
——
——
——
— – 20
— – 10
— – 20
2
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
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