BC846BPDW Datasheet, PDF (1/9 Pages) Weitron Technology – NPN/PNP Dual General Purpose Transistors

DATA SHEET
SEMICONDUCTOR
Dual General Purpose
Transistors
NPN/PNP Duals (Complimentary)
BC846BPDW/BC847BPDW
H
6
5
4
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
• Pb−Free Package is Available
MAXIMUM RATINGS − NPN
Rating
Symbol
Collector-Emitter Voltage
BC846
BC847
BC848
V_CEO
Collector-Base Voltage
BC846
BC847
BC848
V_CBO
Emitter−Base Voltage
Collector Current − Continuous
MAXIMUM RATINGS − PNP
V_EBO
I_C
Rating
Symbol
Collector-Emitter Voltage
BC846
BC847
BC848
V_CEO
Collector-Base Voltage
BC846
BC847
BC848
V_CBO
Emitter−Base Voltage
Collector Current − Continuous
V_EBO
I_C
Value
65
45
30
80
50
30
6.0
100
Value
−65
−45
−30
−80
−50
−30
−5.0
−100
Unit
V
V
V
mAdc
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR−5 Board (Note 1) T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 x 0.75 x 0.062 in.
Symbol
P_D
R_qJA
Max
380
250
3.0
328
Unit
mW
mW/°C
°C/W
T_J, T_stg − 55 to +150 °C
1
2
3
SOT–363/SC–88
CASE 419B STYLE 1
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
See Table
http://www.yeashin.com
1
REV.02 20120403