BC817-16 Datasheet, PDF (1/3 Pages) Micro Commercial Components – NPN Small Signal Transistor 310mW

DATA SHEET
SEMICONDUCTOR
General Purpose Transistors
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
BC817-16-25-40
H
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
Symbol
P_D
R _θJA
P_D
R _θJA
T _J , T _stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
BC817–16 = 6A; BC817–25 = 6B;BC817–40 = 6C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = –10 mA)
Collector–Emitter Breakdown Voltage
(V_EB = 0, I_C = –10 µA)
Emitter–Base Breakdown Voltage
(I _E = –1.0 µA)
Collector Cutoff Current
(V_CB = 20 V)
(V_CB = 20 V, T_A = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V _(BR)CEO
V _(BR)CES
V _(BR)EBO
I _CBO
45
—
50
—
5.0
—
—
—
—
—
SOT–23 (TO–236AB)
3
12
1
BASE
3
COLLECTOR
2
EMITTER
Max
Unit
—
V
—
V
—
V
100
nA
5.0
µA
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REV.02 20120705