BAW56W Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed double diode

DATA SHEET
SEMICONDUCTOR
Dual Switching Diodes
BAW56W
H
z Pb-Free Package is Available.
DEVICE MARKING
BAW56W = A1
MAXIMUM RATINGS (TA = 25°C)
Rating
Reverse Voltag
Forward Current
Peak Forward Surge Current
Ordering Information
Device
BAW56W
Marking
A1
Symbol
VR
IF
IFM(surge)
Shipping
3000/Tape&Reel
Max
Unit
70
Vdc
200
mAdc
500
mAdc
CATHODE
1
CATHODE
2
3
ANODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board⁽¹⁾
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate⁽²⁾ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ, Tstg
Max
200
1.6
0.625
300
2.4
417
–55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage
V(BR)
70
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
IR
(VR = 25 Vdc, TJ = 150°C)
—
(VR = 70 Vdc)
—
(VR = 70 Vdc, TJ = 150°C)
—
Diode Capacitance
CD
—
(VR = 0, f = 1.0 MHz)
Forward Voltage
VF
(IF = 1.0 mAdc)
—
(IF = 10 mAdc)
—
(IF = 60 mAdc)
—
(IF = 150 mAdc)
—
Reverse Recovery Time
trr
—
(IF = IR = 10 mAdc, RL = 100 Ω, IR(REC) = 1.0 mAdc) (Figure 1)
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
—
30
2.5
50
2.0
715
855
1000
1250
6.0
SOT–323
3
12
Unit
Vdc
µAdc
pF
mVdc
ns
http://www.yeashin.com
1
REV.02 20120305