BAV70W Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed double diode

DATA SHEET
SEMICONDUCTOR
Dual Switching Diodes
FEATURE
ƽSmall plastic SMD package.
ƽFor high-speed switching applications.
ƽPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
BAV70W
Marking
A4
Shipping
3000/Tape&Reel
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
I_F
IFM(surge)
Characteristic
Symbol
Total Device Dissipation FR–5 Board⁽¹⁾
PD
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient RθJA
Total Device Dissipation
PD
Alumina Substrate⁽²⁾ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient RθJA
Junction and Storage Temperature
TJ, Tstg
Max
70
200
500
Max
200
1.6
0.625
300
2.4
417
–55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
V(BR)
70
(VR = 70 Vdc)
IR1
—
(VR = 50 Vdc)
IR2
—
Diode Capacitance
CD
—
(VR = 0, f = 1.0 MHz)
Forward Voltage
VF
(IF = 1.0 mAdc)
—
(IF = 10 mAdc)
—
(IF = 50 mAdc)
—
(IF = 150 mAdc)
—
Reverse Recovery Time
trr
—
(IF= IR=10 mAdc, RL= 100Ω, IR(REC)= 1.0 mAdc) (Figure 1)
Forward Recovery Voltage
VRF
—
(IF = 10 mAdc, tr = 20 ns) (Figure 2)
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
3.For each individual diode while the seeond diode is unbiased.
BAV70W
H
SOT–323
3
12
ANODE
1
ANODE
2
3
CATHODE
Max
—
5.0
100
1.5
715
855
1000
1250
6.0
1.75
Unit
Vdc
µAdc
nAdc
pF
mVdc
ns
V
http://www.yeashin.com
1
REV.02 20120305