BAV70T Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

DATA SHEET
SEMICONDUCTOR
150mW SOT-523 SURFACE MOUNT
Plastic Package
Fast Switching Diode
BAV70T
H
3
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
150
mW
TSTG
Storage Temperature Range
-55 to +125
°C
T_J
Operating Junction Temperature
+125
°C
VR
Reverse Voltage
85
V
IFO
Forward Current
75
mA
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
ƒ Fast Switching Device
ƒ General Purpose Diodes
ƒ RoHS Compliant
ƒ Green EMC
ƒ Matte Tin(Sn) Lead Finish
Electrical Symbol & Marking Codes:
2
1
SOT-523
3
1
2
BAV70T
Marking: JJ
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
V_BR)
Reverse Breakdown Voltage
IR
Reverse Leakage Current
VF
Forward Voltage
TCBAT42WS,
CD
Diode Capacitance
Trr
Reverse Recovery Time
I_R=1µA
VR1=75V
VR2=25V
IF=1mA
IF=10mA
IF=50mA
I_F=150mA
VR=0V, f=1MHz
IF= IR= 10mA
IRR=0.1x IR, RL=100Ω
Limits
Min
Max
85
2
0.03
0.715
0.855
1.00
1.25
1.5
4
Unit
Volts
µA
Volts
pF
ns
http://www.yeashin.com
1
REV.02 20130927