BAV70 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed double diode

DATA SHEET
SEMICONDUCTOR
Monolithic Dual Switching Diode
Common Cathode
• Pb−Free Package is Available.
MAXIMUM RATINGS (TA= 25°C)
Rating
Symbol
Reverse Voltage
Forward Current
Peak Forward Surge Current
VR
IF
IFM(surge)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR–5 Board⁽¹⁾
PD
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient RθJA
Total Device Dissipation
PD
Alumina Substrate⁽²⁾ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient RθJA
Junction and Storage Temperature
TJ, Tstg
DEVICE MARKING
Max
70
200
500
Max
225
1.8
556
300
2.4
417
–55 to +150
BAV70 = A4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage
V(BR)
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
IR
(VR = 25 Vdc,TJ=150°C)
(VR = 70 Vdc)
(VR = 70 Vdc,TJ=150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
Forward Voltage
VF
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
RL=100Ω
trr
(IF= IR=10 mAdc, VR=5.0Vdc, IR(REC)= 1.0 mAdc) (Figure 1)
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Min
70
—
—
—
—
—
—
—
—
—
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
BAV70
Marking
Shipping
A4 3000 Tape & Reel
BAV70
H
SOT–23
3
1
3
CATHODE
2
1
ANODE
2
ANODE
Max
—
60
2.5
100
1.5
715
855
1000
1250
6.0
Unit
Vdc
µAdc
pF
mVdc
ns
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REV.02 20120305