BAV70-A Datasheet, PDF (1/3 Pages) Yea Shin Technology Co., Ltd – Monolithic Dual Switching Diode Common Cathode

DATA SHEET
SEMICONDUCTOR
Monolithic Dual Switching Diode
Common Cathode
• Pb−Free Package is Available.
ƒ ^{AEC-Q 101 qualified}
Base P/N - RoHS compliant, commercial grade
Base P/N-A - RoHS compliant, AEC-Q101 qualified
MAXIMUM RATINGS (TA= 25°C)
Rating
Symbol
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
IF
IFM(surge)
Characteristic
Symbol
Total Device Dissipation FR–5 Board⁽¹⁾
PD
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient RθJA
Total Device Dissipation
PD
Alumina Substrate⁽²⁾ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient RθJA
Junction and Storage Temperature
TJ, Tstg
Max
70
200
500
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
BAV70 = A4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage
V(BR)
70
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
IR
(VR = 25 Vdc,TJ=150°C)
—
(VR = 70 Vdc)
—
(VR = 70 Vdc,TJ=150°C)
—
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
—
Forward Voltage
VF
(IF = 1.0 mAdc)
—
(IF = 10 mAdc)
—
(IF = 50 mAdc)
—
(IF = 150 mAdc)
—
Reverse Recovery Time
RL=100Ω
(IF= IR=10 mAdc, VR=5.0Vdc, IR(REC)= 1.0 mAdc) (Figure 1)
trr
—
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
BAV70
Marking
Shipping
A4 3000 Tape & Reel
http://www.yeashin.com
1
BAV70-A
H
SOT–23
3
1
3
CATHODE
2
1
ANODE
2
ANODE
Max
—
60
2.5
100
1.5
715
855
1000
1250
6.0
Unit
Vdc
µAdc
pF
mVdc
ns
REV.02 20120305