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| BAS21W Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Switching Diode | |||
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DATA SHEET
SEMICONDUCTOR
SOT-323 Plastic-Encapsulate DIODE
SWITCHING DIODE
FEATURES
Power dissipation
PD: 200 mW (Tamb=25 )
Collector current
IF: 200 mA
Collector-base voltage
VR: 19W: 120 V; 20W: 150V ; 21W: 200V
Operating and storage junction temperature range
TJ, Tstg: -55 to +150
BAS19W/20W/21W
H
SOT323 Unit:inch(mm)
High temperature soldering : 260OC / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
BAS19W V(BR) R
IR= 100µA
100
Reverse breakdown voltage
BAS20W
150
BAS21W
200
BAS19W
IR
100V
Reverse voltage leakage current BAS20W
VR=150V
BAS21W
200V
Forward voltage
VF
IF=100mA
IF=200mA
Diode capacitance
CD
VR=0V, f=1MHz
Reveres recovery time
trr
IF=IR=30mA
Irr=0.1ÃIR
MAX
0.1
1000
1250
5
50
UNIT
V
µA
mV
pF
nS
http://www.yeashin.com
1
REV.02 20120305
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