BAS21C Datasheet, PDF (1/3 Pages) Yea Shin Technology Co., Ltd – Switching Diode

DATA SHEET
SEMICONDUCTOR
Switching Diode
FEATURES
z Fast Switching Speed
z Surface Mount Package Ideally Suited for Automatic Insertion
z For General Purpose Switching Applications
z High Conductance
BAS21
BAS21A
S21C
BAS21S
MARKING: JS
MARKING:JS2 MARKING:JS3 MARKING:JS4
JS
JS2
JS3
JS4
BAS21/A/C/S
H
SOT-23
Maximum Ratings @Ta=25℃
Parameter
Repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
Average rectified output current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Repetitive peak forward surge current
Power dissipation
Thermal resistance junction to ambient
Junction temperature
Storage temperature range
Symbol
V_RRM
V_RWM
V_R
I_FM
I_O
I_FSM
I_FRM
P_D
R_θJA
T_J
T_STG
Limit
250
400
200
2.5
625
225
555
150
-55~+150
Unit
V
mA
mA
A
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
Test conditions
Min Max Unit
V_(BR)
I_R= 100µA
250
V
I_R
V_R=200V
0.1
µA
V_F
I_F=100mA
I_F=200mA
C_D
V_R=0V, f=1MHz
1000
mV
1250
5
pF
t_rr
I_F=I_R=30mA,I_rr=0.1×I_R,R_L=100Ω
50
ns
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1
REV.02 20140305