BAS16W Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

DATA SHEET
SEMICONDUCTOR
Silicon Switching Diode
FEATURE
Pb-Free package is available
MAXIMUM RATINGS (TA = 25^oC)
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 µs
Total Power Dissipation, One Diode Loaded
T_A = 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
DEVICE MARKING
BAS16W = A6
Symbol
V_R
I_R
I_FM(surge)
P_D
T_J, T_stg
Symbol
R_θJA
Max
75
200
500
200
1.6
–55 to +150
Max
0.625
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Forward Voltage
(I_F = 1.0 mA)
(I_F = 10 mA)
(I_F = 50 mA)
(I_F = 150 mA)
Reverse Current
(V_R = 75 V)
(V_R = 75 V, T_J = 150°C)
(V_R = 25 V, T_J = 150°C)
Capacitance
(V_R = 0, f = 1.0 MHz)
Reverse Recovery Time
(I_F = I_R = 10 mA, R_L = 50 Ω) (Figure 1)
Stored Charge
(I_F = 10 mA to V_R = 6.0 V, R_L = 500 Ω) (Figure 2)
Forward Recovery Voltage
(I_F = 10 mA, t_r = 20 ns) (Figure 3)
Unit
V
mA
mA
mW
mW/°C
°C
Unit
°C/mW
Symbol
V_F
I_R
C_D
t_rr
QS
V_FR
Ordering Information
Device
BAS16W
BAS16W
Marking
A6
A6
Shipping
3000/Tape&Reel
10000/Tape&Reel
http://www.yeashin.com
1
BAS16W
H
SOT–323
3
1
3
CATHODE
2
1
ANODE
Min
Max
Unit
mV
—
715
—
866
—
1000
—
1250
µA
—
1.0
—
50
—
30
—
2.0
pF
—
6.0
ns
—
45
PC
—
1.75
V
REV.02 20140305