BAS16T Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed diode

DATA SHEET
SEMICONDUCTOR
Silicon Switching Diode
FEATURE
z We declare that the material of product
compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable.
MAXIMUM RATINGS (TA = 25oC)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
V_R
75
V
Recurrent Peak Forward Current
I_R
200
mA
Peak Forward Surge Current
Pulse Width = 10 µs
I_FM(surge)
500
mA
Total Power Dissipation, One Diode Loaded
P_D
T_A = 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
150
mW
1.6
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
DEVICE MARKING
BAS16T = A6
R_θJA
0.625
°C/mW
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Forward Voltage
V_F
(I_F = 1.0 mA)
(I_F = 10 mA)
(I_F = 50 mA)
(I_F = 150 mA)
Reverse Current
I_R
(V_R = 75 V)
(V_R = 75 V, T_J = 150°C)
(V_R = 25 V, T_J = 150°C)
Capacitance
C_D
(V_R = 0, f = 1.0 MHz)
Reverse Recovery Time
t_rr
(I_F = I_R = 10 mA, R_L = 50 Ω) (Figure 1)
Stored Charge
QS
(I_F = 10 mA to V_R = 6.0 V, R_L = 500 Ω) (Figure 2)
Forward Recovery Voltage
V_FR
(I_F = 10 mA, t_r = 20 ns) (Figure 3)
ORDERING INFORMATION
Device
Marking
Shipping
BAS16T
A6
3000/Tape&Reel
BAS16T
A6
10000/Tape&Reel
BAS16T
H
SOT-523/SC-89
3
CATHODE
1
ANODE
Min
Max
Unit
mV
—
715
—
866
—
1000
—
1250
µA
—
1.0
—
50
—
30
—
2.0
pF
—
6.0
ns
—
45
PC
—
1.75
V
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REV.02 20130922