BAS16 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Small Signal Diode

DATA SHEET
SEMICONDUCTOR
Switching Diode
ƽ We declare that the material of product
compliance with RoHS requirements.
ƽ ESD Rating: Human Body Model,class 3A
DEVICE MARKING AND ORDERING INFORMATION
Device
BAS16
Marking
A6
Package
SOT-23
Shipping
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
V_R
I_F
I _FM(surge)
Value
75
200
500
Unit
Vdc
mAdc
mAdc
BAS16
H
SOT–23
3
CATHODE
1
ANODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V _R = 75Vdc)
(V _R = 75 Vdc, T _J = 150°C)
(V _R = 25 Vdc, T _J = 150°C)
Reverse Breakdown Voltage
(I _BR = 100 µAdc)
Forward Voltage
(I _F = 1.0 mAdc)
(I _F = 10 mAdc)
(I _F = 50 mAdc)
(I _F = 150 mAdc)
Diode Capacitance
(V _R = 0, f = 1.0 MHz)
Forward Recovery Voltage
(I _F = 10 mAdc, t _r = 20ns )
Reverse Recovery Time
(I _F = I _R = 10 mAdc, R _L = 50 Ω)
Stored Charge
(I _F = 10 mAdc to V _R= 5.0Vdc, R _L = 500 Ω)
I_R
—
—
—
V _(BR)
75
V_F
—
—
—
—
C_D
—
V _FR
–-
t _rr
—
Q_S
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://www.yeashin.com
1
Max
1.0
50
30
—
715
855
1000
1250
2.0
1.75
6.0
45
Unit
µAdc
Vdc
mV
pF
Vdc
ns
pC
REV.02 20130322