B1S Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER(VOLTAGE - 100 to 1000 Volts CURRENT - 0.5 Amperes)

DATA SHEET
SEMICONDUCTOR
B1S THRU B10S
MINI SURFACE MOUNT GLASS PASSIVATED
SINGLE-PHASE BRIDGE RECTIFIER
VOLTAGE 100 to 1000Volts CURRENT 0.5 Amperes
FEATURES
Plastic material used carries Underwriters
Laboratory recognition 94V-O
Low leakage
Surge overload rating-- 30 amperes peak
Ideal for printed circuit board
Exceeds environmental standards of MIL-S-19500
High temperature soldering : 260^OC / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
MDI Unit:inch(mm)
DI
+
.157(4.0)
.142(3.6)
~
~
.031(0.8)
.019(0.5)
.008(0.2)
.275(7.0)
MAX
MECHANICAL DATA
.193(4.9)
.177(4.5)
Case: Reliable low cost construction utilizing molded plastic technique results in
inexpensive product
Terminals: Lead solderable per MIL-STD-202, Method 208.
Polarity: Polarity symbols molded or marking on body.
Mounting Position: Any.
Weight: 0.008 ounce, 0.22 gram.
.106(2.7)
.090(2.3)
.106(2.7)
.090(2.3)
.043(1.1)
.027(0.7)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, Resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
SYMBOL B1S B2S B4S B6S B8S B10S
Maximum Recurrent Peak Reverse Voltage
VRRM
100
200
400
600
800 1000
Maximum RMS Bridge Input Voltage
VRMS
70
140
280
420
560
700
Maximum DC Blocking Voltage
VDC
100
200
400
600
800 1000
Maximum Average Forward Current TA=40
0. 5
IAV
TA=25 (Note 3)
0.8*
Peak Forward Surge Current:8.3ms single half sine-wave
IFSM
35
superimposed on rated load (JEDEC method)
I2t Rating for fusing (t<8.35ms)
I2t
3.735
Maximum Forward Voltage Drop per Bridge Element at 0.5A
VF
1.0
Maximum DC Reverse Current TJ=25
at Rated DC Blocking Voltage TJ=125
5.0
IR
500
Typical Junction capacitance (Note 1)
CJ
25
Rθ A J
85
Typical thermal resistance per leg (Note2)
Rθ L J
20
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
2. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 X 0.5"(13 X 13mm) copper pads
3. * R-load on alumina subtrate Ta=25oC
UNITS
V
V
V
A
A
A2t
V
uA
pF
/W
http://www.yeashin.com
1
REV.02 20120305