2SC4617Q Datasheet, PDF (1/4 Pages) Yea Shin Technology Co., Ltd – General Purpose Transistors NPN Silicon

DATA SHEET
SEMICONDUCTOR
General Purpose Transistors
NPN Silicon
2SC4617Q-R-S
H
SC-89
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Symbol
Limits
Unit
VCBO
60
V
VCEO
50
V
VEBO
7
V
IC
0.15
A
PC
0.15
W
3
12
COLLECTOR
3
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
−55~+150
˚C
1
BASE
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 60
Collector-emitter breakdown voltage BVCEO 50
Emitter-base breakdown voltage
BVEBO 7
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE
120
Transition frequency
fT
−
Output capacitance
Cob
−
Typ.
−
−
−
−
−
−
−
180
2.0
Max.
−
−
−
0.1
0.1
0.5
560
−
3.5
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=50µA
IC=1µA
IE=50µA
VCB=60V
VEB=7V
IC/IB=50mA/5mA
VCE=6V, IC=1mA
VCE=12V, IE=2mA, f=30MHz
VCB=12V, IE=0A, f=1MHz
!Device marking
2SC4617Q=BQ 2SC4617R=BR 2SC4617S=BS
!hFE values are classified as follows:
Item
hFE
Q
120~270
R
180~390
S
270~560
2
EMITTER
http://www.yeashin.com
1
REV.02 20120703