2SC3356 Datasheet, PDF (1/4 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

SEMICONDUCTOR
DATA SHEET
2SC3356
H
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
SOT–23 (TO–236AB)
3
12
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150

C
Storage Temperature
Tstg
55 to +150
C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0

A VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0

A VEB = 1.0 V, IC = 0
DC Current Gain
hFE
82
170
270
VCE = 10 V, IC = 20 mA
Gain Bandwidth Product
fT
7
GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance
Cre**
0.55
1.0
pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain

S21e
²
11.5
dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF
1.1
2.0
dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* Pulse Measurement PW  350
s, Duty Cycle  2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
Marking
2SC3356 R24
http://www.yeashin.com
1
REV.02 20120703