2SC2412KQ Datasheet, PDF (1/4 Pages) Yea Shin Technology Co., Ltd – General Purpose Transistors

DATA SHEET
SEMICONDUCTOR
General Purpose Transistors
NPN Silicon
• Pb−Free Package is Available.
ORDERING INFORMATION
Device
Marking
2SC2412KQ
BQ
2SC2412KR
2SC2412KS
BR
G1F
MAXIMUM RATINGS
Shipping
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
Rating
Symbol Value
Unit
Collector–Emitter Voltage
V CEO
50
V
Collector–Base Voltage
V CBO
60
V
Emitter–Base Voltage
V EBO
7.0
V
Collector Current — Continuous I _C
Collector power dissipation
P_C
Junction temperature
T_j
Storage temperature
T _stg
150
mAdc
0.2
W
150
°C
-55 ~+150 °C
DEVICE MARKING
2SC2412KQ =BQ 2SC2412KR =BR 2SC2412KS =G1F
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(I_C = 1 mA)
Emitter–Base Breakdown Voltage
(I_E = 50 µA)
Collector–Base Breakdown Voltage
(I_C = 50 µA)
Collector Cutoff Current
(V_CB = 60 V)
Emitter cutoff current
(V_EB = 7 V)
Collector-emitter saturation voltage
(I_C/ I_B = 50 mA / 5m A)
DC current transfer ratio
(V _CE = 6 V, I _C= 1mA)
Transition frequency
(V _CE = 12 V, I _E= – 2mA, f =30MHz )
Output capacitance
(V _CB = 12 V, I _E= 0A, f =1MHz )
Symbol
V _(BR)CEO
V _(BR)EBO
V _(BR)CBO
I _CBO
I _EBO
V _CE(sat)
h _FE
f_T
C _ob
Min
50
7
60
—
—
—
120
—
—
Typ
—
—
—
—
—
—
––
180
2.0
h _FE values are classified as follows:
*
Q
R
hFE
120~270
180~390
http://www.yeashin.com
S
270~560
1
2SC2412KQ/R/S
H
SOT–23 (TO–236AB)
3
1
1
BASE
2
3
COLLECTOR
2
EMITTER
Max Unit
—
V
—
V
—
V
0.1
µA
0.1
µA
0.4
V
560
––
––
MHz
3.5
pF
REV.02 20120703