2SB1197KQ Datasheet, PDF (1/3 Pages) Yea Shin Technology Co., Ltd – Low Frequency Transistor PNP Silicon

DATA SHEET
SEMICONDUCTOR
Low Frequency Transistor
2SB1197KQ/R
H
PNP Silicon
FEATURE
ƽHigh current capacity in compact package.
I_C = í0.8A.
ƽEpitaxial planar type.
ƽNPN complement: 2SD1781K
ƽPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
2SB1197KQ
AHQ
3000/Tape&Reel
2SB1197KR
AHR
3000/Tape&Reel
MAXIMUM RATINGS(Ta=25qC)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−40
V
Collector-emitter voltage
VCEO
−32
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−0.8
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to 150
°C
ELECTRICAL CHARACTERISTICS(Ta=25qC)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −40
Collector-emitter breakdown voltage BVCEO −32
Emitter-base breakdown voltage
BVEBO −5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE 120
Transition frequency
fT
−
Output capacitance
Cob −
Typ. Max. Unit
−
−
V
−
−
V
−
−
V
− −0.5 µA
− −0.5 µA
− −0.5 V
−
390
−
200 − MHz
12 30 pF
h_FE values are classified as follows :
Item(*)
Q
hFE
120~270
R
180~390
SOT–23 (TO–236AB)
3
1
1
BASE
2
3
COLLECTOR
2
EMITTER
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −20V
VEB= −4V
IC/IB= −0.5A/ −50mA
VCE= −3V, IC= −100mA
VCE= −5V, IE=50mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
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1
REV.02 20120705