2SA812Q Datasheet, PDF (1/5 Pages) Yea Shin Technology Co., Ltd – General Purpose Transistors

DATA SHEET
SEMICONDUCTOR
General Purpose Transistors
FEATURE
ƽHigh Voltage: V_CEO = -50 V.
ƽEpitaxial planar type.
ƽNPN complement: 2SC1623
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
2SA812Q
M8
3000/Tape&Reel
2SA812Q
M8
2SA812R
M6
10000/Tape&Reel
3000/Tape&Reel
2SA812R
M6
2SA812S
M7
2SA812S
M7
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
V_CEO
Collector-Base Voltage
V_CBO
Emitter-Base Voltage
V_EBO
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
T_A=25^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 ^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
L2SA812
-50
-60
-6
-150
Unit
V
V
V
mAdc
Symbol
P_D
R _θJA
P_D
R _θJA
Tj ,Tstg
Max
200
1.8
556
200
2.4
417
-55 to +150
2SA812Q/R/S
H
SOT-23
1
BASE
3
COLLECTOR
2
EMITTER
Unit
mW
mW/^oC
o_C/W
mW
mW/^oC
o_C/W
o_C
http://www.yeashin.com
1
REV.02 20140606