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2SA1774Q Datasheet, PDF (1/3 Pages) Yea Shin Technology Co., Ltd – General Purpose Transistors | |||
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DATA SHEET
SEMICONDUCTOR
General Purpose Transistors
2SA1774Q-R-S
H
PNP Silicon
SC-89
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Symbol
VCBO
VCEO
VEBO
IC
Limits
â60
â50
â6
â0.15
Unit
V
V
V
A (DC)
PC
0.15
W
3
12
COLLECTOR
3
Junction temperature
Tj
Storage temperature
Tstg
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO â60
Collector-emitter breakdown voltage BVCEO â50
Emitter-base breakdown voltage
BVEBO â6
Collector cutoff current
ICBO
â
Emitter cutoff current
IEBO
â
Collector-emitter saturation voltage VCE(sat) â
DC current transfer ratio
hFE
120
Transition frequency
fT
â
Output capacitance
Cob
â
Typ.
â
â
â
â
â
â
â
140
4.0
150
â55~+150
Max.
â
â
â
â0.1
â0.1
â0.5
560
â
5.0
Unit
V
V
V
µA
µA
V
â
MHz
pF
ËC
ËC
1
BASE
Conditions
IC=â50µA
IC=â1µA
IE=â50µA
VCB=â60V
VEB=â6V
IC/IB=â50mA/â5mA
VCE=â6V, IC=â1mA
VCE=â12V, IE=2mA, f=30MHz
VCB=â12V, IE=0A, f=1MHz
2
EMITTER
!Device marking
2SA1774Q=FQ 2SA1774R=FR 2SA1774S=FS
!hFE values are classified as follows:
Item
Q
R
hFE
120~270 180~390
S
270~560
http://www.yeashin.com
1
REV.02 20120705
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