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2SA1037AKX Datasheet, PDF (1/4 Pages) Yea Shin Technology Co., Ltd – General Purpose Transistors | |||
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DATA SHEET
SEMICONDUCTOR
2SA1037AKx Series
General Purpose Transistors
PNP Silicon
Featrues
z We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
Device
Package
Shipping
2SA1037AKX
SOT23
3000/Tape & Reel
MAXIMUM RATINGS
Rating
Symbol Value
Unit
CollectorâEmitter Voltage
V CEO
CollectorâBase Voltage
V CBO
EmitterâBase Voltage
V EBO
Collector Current â Continuous I C
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
T stg
â50
V
â60
V
â6.0
V
â150 mAdc
0.2
W
150
°C
-55 ~+150 °C
DEVICE MARKING
2SA1037AKQ=FQ 2SA1037AKS=G3F 2SA1037AKR=FR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
CollectorâEmitter Breakdown Voltage
(IC = â1 mA)
EmitterâBase Breakdown Voltage
(IE = â 50 µA)
CollectorâBase Breakdown Voltage
(IC = â 50 µA)
Collector Cutoff Current
(VCB = â 60 V)
Emitter cutoff current
(VEB = â 6 V)
Collector-emitter saturation voltage
(IC/ IB = â 50 mA / â 5m A)
DC current transfer ratio
(V CE = â 6 V, I C= â1mA)
Transition frequency
(V CE = â 12 V, I E= 2mA, f=30MHz )
Output capacitance
(V CB = â 12 V, I E= 0A, f =1MHz )
Symbol
V (BR)CEO
V (BR)EBO
V (BR)CBO
I CBO
I EBO
V CE(sat)
h FE
fT
C ob
Min
â 50
â6
â 60
â
â
â
120
â
â
Typ
â
â
â
â
â
â
ââ
140
4.0
h FE values are classified as follows:
*
Q
R
hFE
120~270
180~390
S
270~560
H
SOTâ 23
1
BASE
3
COLLECTOR
2
EMITTER
Max Unit
â
V
â
V
â
V
â 0.1 µA
â 0.1
µA
-0.5
V
560
ââ
ââ
MHz
5.0
pF
http://www.yeashin.com
1
REV.02 20120703
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