2N7002E Datasheet, PDF (1/4 Pages) NXP Semiconductors – N-channel TrenchMOS FET

DATA SHEET
SEMICONDUCTOR
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
·Low On-Resistance
·Fast Switching Speed
·Low-voltage drive
·Easily designed drive circuits
·Can protect against static electricity 1KV when
the product is in use.
·Pb-Free Package is available.
·AEC-Q101 Pass
2N7002E
H
Drain
3
1
2
Gate
Source
SOT– 23
ORDERING INFORMATION
Device
2N7002E
Marking
RS
' ^{M inimum Q t' y}
3000/TR
Maximum Ratings @ TA=25℃ unless otherwise specified
Characteristic
Symbol
2N7002E
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
Continuous VGSS
±20
V
Drain Current
Continuous
ID
115
mA
Pulsed
IDP *1
800
mA
Reverse drain current
Total Power Dissipation
Channel temperature
Storage Temperature Range
Continuous
IDR
115
mA
Pulsed
IDRP *1
800
mA
g^{Pd *2} p y
225
mW
Tch
150
℃
Tstg
-55 to +150
℃
*1 Pw ≦10 µs, Duty cycle ≦1 %
*2 When mounted on a 1*0.75*0.062 inch lass e ox board
http://www.yeashin.com
1
REV.02 20120403